{"paper":{"title":"Giant room temperature piezoresistance in a metal/silicon hybrid","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A.C.H. Rowe, A. Donoso-Barrera, Ch. Renner, S. Arscott","submitted_at":"2008-03-05T13:13:03Z","abstract_excerpt":"Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843, measured at room temperature, compares with a GF of -93 measured in the bulk homogeneous silicon. This piezoresistance boost is not due to the silicon/aluminum interface, but results from a stress induced anisotropy in the silicon conductivity that acts to switch current away from the highly conductive a"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"0803.0655","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}