{"paper":{"title":"Plasma effects in a micromachined floating-gate high-electron-mobility transistor","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"I. Hagiwara, I. Khmyrova, M. Ryzhii, M. S. Shur, V. Ryzhii, Y. Hu","submitted_at":"2007-05-15T04:59:09Z","abstract_excerpt":"We study plasma effects in a micromachined high-electron mobility transistor (HEMT) with the microcantilever serving as the gate using the developed a model. The model accounts for mechanical motion of the microcantilever and spatio-temporal variations (plasma effects) of the two-dimensional electron gas(2DEG) system in the transistor channel. The microcantilever mechanical motion is described in the point-mass approximation. The hydrodynamic electron transport model is used to describe distributed electron plasma phenomena in the 2DEG system. Using the developed model, we calculated the respo"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"0705.2082","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/0705.2082/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}