{"paper":{"title":"Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n$^{+}$/p Junctions","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Amritesh Rai, Sanjay K. Banerjee, Taegon Kim, William Hsu, Xiaoru Wang, Yun Wang","submitted_at":"2017-05-18T07:33:58Z","abstract_excerpt":"The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860{\\deg}C for 400$\\mu$s. The reverse junction leakage is found to strongly depend on the abruptness of dopant profiles. A shallow and abrupt junction is shown to have lower phosphorous activation level, due to surface dose loss, and higher band-to-band tunneling (BTBT) leakage, when compared to the deep junction. Simulations were carried out to evaluate the lowest achievable OFF-state currents (I$_{OFF}$) for Ge double-gate FETs when using such an abrupt junction. Our"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1705.06733","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}