{"paper":{"title":"Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci","cond-mat.other","quant-ph"],"primary_cat":"physics.app-ph","authors_text":"(2) Osaka Univ., (3) TDK Co.), Hayato Koike (3), Masashi Shiraishi (1) ((1) Kyoto Univ., Naoto Yamashita (1), Shinji Miwa (2), Soobeom Lee (1), Yoshishige Suzuki (2), Yuichiro Ando (1)","submitted_at":"2017-04-21T06:41:55Z","abstract_excerpt":"The temperature evolution of spin relaxation time, {\\tau}sf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. {\\tau}sf at 300 K is estimated to be 1.68+-0.03 ns and monotonically increased with decreasing temperature down to 100 K. Below 100 K, in contrast, it shows almost a constant value of ca. 5 ns. The temperature dependence of the conductivity of the Si channel shows a similar behavior to that of the {\\tau}sf, i.e., monotonically increasing with decreasing temperature down to 100 K and a weak temperature dependence below 100 K"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.06414","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}