{"paper":{"title":"Hopping Conduction via Ionic Liquid Induced Silicon Surface States","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.dis-nn"],"primary_cat":"cond-mat.mes-hall","authors_text":"A.M. Goldman, B.I. Shklovskii, J. Nelson, K.V. Reich, M. Sammon","submitted_at":"2015-05-01T01:06:55Z","abstract_excerpt":"In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the \"hydrogen atom of solid state physics\" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}\\text{cm}^{-2}$, hundreds of times smaller than record values. We find that in this case an excess negative ion binds a hole on the interface between the IL and Si becoming a surface acceptor. We study the surface conductance of holes hopping between"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1505.00065","kind":"arxiv","version":6},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}