{"paper":{"title":"Ultra-Broadband Terahertz Perfect Absorber based on Doped Silicon","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Ankit Vora, Arun Matai, Satyadhar Joshi","submitted_at":"2018-07-01T15:56:53Z","abstract_excerpt":"The requirement for metamaterial perfect absorbers (MPA) based on doped semiconductors is steadily increasing due to the available matured fabrication and simulation technology. There is a particular interest in developing terahertz (THz) perfect absorbers using doped semiconductors for achieving characteristics such as polarization-independence, wide-angle, and broadband absorption. We report MPA based on patterned arrays of tapered micro-cylindrical structures of doped silicon to enable them with broadband, wide-angle, and polarization-independent response. In this work, we modeled the MPA s"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1807.00348","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}