{"paper":{"title":"Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Lutz Geelhaar, Oliver Brandt, Pierre Corfdir, Ryan B. Lewis","submitted_at":"2017-04-27T12:53:26Z","abstract_excerpt":"We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of GaAs nanowires. At 10 K, neutral excitons confined in these quantum dots give rise to photoluminescence lines between 1.1 and 1.4 eV. Magneto-photoluminescence spectroscopy reveals that for small quantum dots emitting between 1.3 and 1.4 eV, the electron-hole coherence length in and perpendicular to the (110) plane is on the order of 5 and 2 nm, respectively. T"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.08543","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}