{"paper":{"title":"Defects controlled hole doping and multi-valley transport in SnSe single crystals","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chenqiang Hua, Congcong Fan, D. W. Shen, Feng Sheng, Hanyan Fang, Jiong Lu, Yifeng Hu, Yi Zheng, Yunhao Lu, Zhen Wang, Zhixuan Shen, Zhizhan Qiu, Zhu-an Xu","submitted_at":"2017-06-30T08:13:31Z","abstract_excerpt":"SnSe is a promising thermoelectric material with record-breaking figure of merit, \\textit{i.e., ZT}. As a semiconductor, optimal electrical dosage is the key challenge to maximize \\textit{ZT} in SnSe. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole doping mechanism in SnSe is still absent. Here, we report the highly anisotropic electronic structure of SnSe investigated by both angle-resolved photoemission spectroscopy and quantum transport, in which a unique \"\\textit{pudding-mold}\" shaped valence band with quasi-linear energy disper"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1706.10054","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}