{"paper":{"title":"Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A.S. Gurevich, A. Waag, H. Mariette, J. Bleuse, R. Akimoto, V.P. Kochereshko","submitted_at":"2011-04-27T16:23:23Z","abstract_excerpt":"Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1104.5181","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}