{"paper":{"title":"Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"GaAs substrate preparation controls whether 2D GaSe grows tilted or flat by tuning interface dangling-bond coordination.","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Aida Sheibani, Calbi Gunder, Charles Paillard, Fernando Maia de Oliveira, Gregory Salamo, Hryhorii Stanchu, Hugh Churchill, Kanagaraj Moorthi, Mohammad Zamani, Mourad Benamara, Serhii Kryvyi, Yuriy I. Mazur","submitted_at":"2026-02-13T13:00:35Z","abstract_excerpt":"Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have reported significant differences in growth morphology, polytype, and the nature of the interface. The results differ, ranging from GaSe 2D film growth at tilted 2D planes to observed spiral structures, thereby calling for a deeper understanding of the impact of the substrate interface on the growth of GaSe films. In this paper, we conduct a comprehensive reexamination of the growth mechanism of GaSe on GaAs substrates "},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"Our results resolve the mechanistic origin of tilted versus non-tilted 2D growth and establish a general interface-driven orientation selection rule linking substrate symmetry and dangling-bond coordination to layered heteroepitaxy.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"The assumption that observed differences in morphology arise primarily from substrate preparation methods rather than uncontrolled variables such as exact growth temperature, flux ratios, or residual contaminants, and that results on these two orientations generalize to a broad selection rule.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"Substrate surface preparation controls whether 2D GaSe grows tilted or flat on GaAs, establishing an interface-driven orientation selection rule based on substrate symmetry and dangling-bond coordination.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"GaAs substrate preparation controls whether 2D GaSe grows tilted or flat by tuning interface dangling-bond coordination.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"df4444b08fdb49a30cb5f8b5b67dd98463b3a5b69e72bb419140517df888c5f8"},"source":{"id":"2602.12899","kind":"arxiv","version":2},"verdict":{"id":"3f35effd-3c78-4f4a-ad93-d17054ea7204","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-15T22:35:24.702798Z","strongest_claim":"Our results resolve the mechanistic origin of tilted versus non-tilted 2D growth and establish a general interface-driven orientation selection rule linking substrate symmetry and dangling-bond coordination to layered heteroepitaxy.","one_line_summary":"Substrate surface preparation controls whether 2D GaSe grows tilted or flat on GaAs, establishing an interface-driven orientation selection rule based on substrate symmetry and dangling-bond coordination.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"The assumption that observed differences in morphology arise primarily from substrate preparation methods rather than uncontrolled variables such as exact growth temperature, flux ratios, or residual contaminants, and that results on these two orientations generalize to a broad selection rule.","pith_extraction_headline":"GaAs substrate preparation controls whether 2D GaSe grows tilted or flat by tuning interface dangling-bond coordination."},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":2,"snapshot_sha256":"1e52e71d941354e8ed60fcdaea50f10ca806220a69bc908859b72532d9d9b8a9"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}