{"paper":{"title":"Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Abigail J. Graham, Aidan P. Rooney, Alessio Giampietri, Alexei Barinov, Alistair Garner, Anastasia V. Tyurnina, Daniel Terry, Jack Donoghue, Johanna Zultak, Maciej Koperski, Matthew Hamer, Natalie C. Teutsch, Neil R. Wilson, Roman Gorbachev, Sarah J. Haigh, Viktor Kandyba, Viktor Z\\'olyomi, Vladimir I. Fal'ko, Xue Xia","submitted_at":"2019-01-21T14:38:43Z","abstract_excerpt":"Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($\\mu$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliate"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1901.06943","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}