{"paper":{"title":"Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. M. Josheph, Apurba Laha, D. Saha, Krista R. Khiangte, R. Fandan, Ritam Sarkar, S. Chouksey, S. Das, S. Ganguly","submitted_at":"2016-03-29T01:14:20Z","abstract_excerpt":"The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs exhibiting different shapes, sizes and distribution were grown at various substrate temperatures with same Ga-N (III-V) ratio of 0.4. We observe that sample grown at lower substrate temperature (~700 degC) results 2-dimensional island like structure with almost very little (~30%) circularity while increasing substrate temperature (>770 degC) leads to growth of "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1603.08603","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}