{"paper":{"title":"2D SnS: a phosphorene analogue with strong in-plane electronic anisotropy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Chenglei Guo, Jiamin Xue, Mingxing Zhao, Ranran Li, Zhen Tian","submitted_at":"2016-12-28T14:30:37Z","abstract_excerpt":"We study the anisotropic electronic properties of 2D SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscope and polarized Raman spectroscopy, we identify the zigzag and armchair directions of the as-grown 2D crystals. 2D SnS field-effect transistors with a cross-Hall-bar structure are fabricated. They show heavily hole-doped (~10$^{19}$ cm$^{-3}$) conductivity with strong in-plane anisotropy. At room temperature the mobility along the zigzag direction exceeds 20 cm$^{2}$V$^{-1}$s$^{-1}$, which can be up to 1.7 times of that in the armchair dir"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1612.08896","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}