{"paper":{"title":"Compact Modeling of I-V Characteristics, Temperature Dependency, Variations, and Noise of Integrated, Reproducible Metal-Oxide Memristors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"A. Vincent, D. Strukov, H. Nili, I. Kataeva, M. Prezioso, M. R. Mahmoodi","submitted_at":"2018-10-17T17:39:40Z","abstract_excerpt":"We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data, collected on several hundred devices. The static equation describes the device current, at non-disturbing voltages, as a sum of three components, representing the average behavior and its device-to-device and temporal variations. All three components are expressed as functions of the applied voltage, ambient temperature, and the current memory state. The dynam"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1811.10385","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}