{"paper":{"title":"Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A.D. Koehler, A. Nath, C.R. Eddy, D.K. Gaskill, J. A. Wollmershauser, Jr., J. T Robinson, K. Sridhara, M. Currie, M.J. Tadjer, M.V.Rao, R.L. Myers-Ward, S. C. Hernandez, V.D. Wheeler, Z.R. Robinson","submitted_at":"2014-11-19T05:17:39Z","abstract_excerpt":"Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled doping and increased scattering which results in high and inconsistent co"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1411.5114","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}