{"paper":{"title":"Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Aurimas Sakanas, Elizaveta Semenova, Jesper M{\\o}rk, Kresten Yvind, Luisa Ottaviano","submitted_at":"2018-08-21T13:23:09Z","abstract_excerpt":"In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and processing configurations which represent typical on-chip photonic device fabrication conditions, the smallest degree of linearly-corrected distortion errors is obtained for the directly bonded wafer, with the alignment marks both formed and measured on the same InP layer side after bonding (equivalent to single-sided processing of the bonded layer). Under these con"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1808.06888","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}