{"paper":{"title":"Ultrasensitive 1D field-effect phototransistor: CH$_3$NH$_3$PbI$_3$ nanowire sensitized individual carbon nanotube","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"B. N\\'afr\\'adi, E. Horv\\'ath, H. M. T\\'oh\\'ati, K. Kamar\\'as, L. Forr\\'o, M. Spina, R.Gaal","submitted_at":"2016-11-28T15:48:04Z","abstract_excerpt":"Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH$_3$NH$_3$PbI$_3$ nanowires (MAPbI$_3$NW). These devices represent light responsivities of R=7.7x10$^5$ A/W at low-lighting conditions in the nWmm$^{-2}$ range, unprecedented among CNT-based photo detectors. At high incident power (~1 mWmm$^{-2}$), light soaking results in a negative photocurrent, the device turns insulating. We interpret the phenomenon as a result of efficient electron-hole separation and charge transfer of holes from the perovskite to the carbon nanotube, which improves "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1611.09205","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}