{"paper":{"title":"Well-Posed Models of Memristive Devices","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cs.CE"],"primary_cat":"cs.ET","authors_text":"Jaijeet Roychowdhury, Tianshi Wang","submitted_at":"2016-05-15T04:17:43Z","abstract_excerpt":"Existing compact models for memristive devices (including RRAM and CBRAM) all suffer from issues related to mathematical ill-posedness and/or improper implementation. This limits their value for simulation and design and in some cases, results in qualitatively unphysical predictions. We identify the causes of ill-posedness in these models. We then show how memristive devices in general can be modelled using only continuous/smooth primitives in such a way that they always respect physical bounds for filament length and also feature well-defined and correct DC behaviour. We show how to express t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1605.04897","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}