{"paper":{"title":"Pt, Ni and Ti Schottky barrier contacts to \\{beta}-(Al0.19Ga0.81)2O3 grown by Molecular Beam Epitaxy on Sn doped \\{beta}-Ga2O3 substrate","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Abhishek Vaidya, A. Kuramata, K. Sasaki, T. Masui, Uttam Singisetti","submitted_at":"2018-03-20T16:08:00Z","abstract_excerpt":"A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \\{beta}-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on \\{beta}-Ga2O3 for temperatures ranging between 25C -300C. Reciprocal space mapping shows the (Al0.19Ga0.81)2O3 films are strained and lattice matched to the substrate. Schottky Barrier Height (SBH), ideality factor (n), and series resistance (Rs) are extracted from the I-V characteristics for the three types of metals and temperatures. Room temperature capacitance-voltage (C-V)"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1803.07504","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}