{"paper":{"title":"Andreev reflection in engineered Al/Si/InGaAs(001) junctions","license":"","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.supr-con","authors_text":"A. Franciosi, F. Beltram, F. Giazotto, L. Sorba, M. Lazzarino, S. De Franceschi","submitted_at":"1999-04-22T15:39:02Z","abstract_excerpt":"Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing the realization of truly Ohmic non-alloyed contacts in low-doped and low-In content InGaAs/Si/Al junctions. It is shown that this technique is ideally suited for the fabrication of high-transparency superconductor-semiconductor junctions. To this end magnetotransport characterization of Al/Si/InGaAs low-n-doped single junctions below the Al critical temperatu"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/9904328","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/cond-mat/9904328/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}