{"paper":{"title":"Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Alessandro Fortunelli, Amit Gahoi, Enrique G. Marin, Gianluca Fiori, Giuseppe Iannaccone, Max C. Lemme, Teresa Cusati, Vikram Passi","submitted_at":"2018-07-12T18:07:10Z","abstract_excerpt":"A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific contact resistivity is reduced from 1372 {\\Omega}m for a device with surface contacts to 456 {\\Omega}m when contacts are patterned with holes. Electrostatic doping of the graphene further reduces contact resistivity from 519 {\\Omega}m to 45 {\\Omega}m, a substantial decrease of 91%. The experimental results are supported and understood via a multi-sc"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1807.04772","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}