{"paper":{"title":"Neutron-induced strike: Study of multiple node charge collection in 14nm FinFETs","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cs.ET","authors_text":"Madhav P. Desai, Nanditha P. Rao","submitted_at":"2017-06-11T07:01:10Z","abstract_excerpt":"FinFETs have replaced the conventional bulk CMOS transistors in the sub-20nm technology. One of the key issues to consider is, the vulnerability of FinFET based circuits to multiple node charge collection due to neutron-induced strikes. In this paper, we perform a device simulation based characterization study on representative layouts of 14nm bulk FinFETs in order to study the extent to which multiple transistors are affected. We find that multiple transistors do get affected and the impact can last up to five transistors away (~200nm). We show that the potential of source/drain regions in th"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1706.03315","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}