{"paper":{"title":"Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.str-el","authors_text":"Hairong Zheng, K. M. Mertes, M. P. Sarachik, Sergey A. Vitkalov, T. M. Klapwijk","submitted_at":"2000-04-12T18:23:35Z","abstract_excerpt":"Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value. For H<H_{sat}, the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0004201","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/cond-mat/0004201/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}