{"paper":{"title":"Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Andreas Bablich, Chanyoung Yim, Daniel Schneider, Georg S. Duesberg, Max C. Lemme, Sarah Riazimehr, Satender Kataria, Vikram Passi","submitted_at":"2015-09-03T10:17:32Z","abstract_excerpt":"We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene/n-Si photodiodes show a considerable responsivity of 270 mA/W within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2)/p-type silicon phot"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1509.01021","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}