{"paper":{"title":"Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["hep-ex"],"primary_cat":"physics.ins-det","authors_text":"A. Miucci, B. Ristic, D. Ferrere, D. Muenstermann, F.A. Di Bello, F. Lanni, F. Meloni, G. Casse, G. Iacobucci, H. Chen, H. Liu, I. Peric, J. Bilbao De Mendizabal, J. Vossebeld, K. Chen, L. Meng, L. Xu, M. Benoit, M. Nessi, M. Rimoldi, M. Vicente Barrero Pinto, M. Weber, S. Gonzalez-Sevilla, T. Golling, W. Wu","submitted_at":"2016-03-25T01:14:35Z","abstract_excerpt":"Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1603.07798","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}