{"paper":{"title":"Two dimensional topological insulators with tunable band gaps: HgTe and HgSe monolayers","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Chao Tang, Chaoyu He, G. Malcolm Stocks, Huaping Xiao, Jianxin Zhong, Jin Li, Jinwoong Kim, Lijun Meng, Nicholas Kioussis, Xiaolin Wei","submitted_at":"2014-12-08T11:59:46Z","abstract_excerpt":"Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer LB HgTe undergoes a transition to a topological nontrivial phase under the appropriate in-plane tensile strain ({\\epsilon} > 2.6%) due to the combination effects of strain and spin orbital coupling (SOC). Under the 2.6%< {\\epsilon} <4.2% tensile strain, the band inversion and topological nontrivial gap are induced by the SOC. For {\\epsilon} >4.2%, the band in"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1412.2528","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}