{"paper":{"title":"Crossover of electron-electron interaction effect in Sn-doped indium oxide films","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Kuang-Hong Gao, Yu-Jie Zhang, Zhi-Qing Li","submitted_at":"2015-03-03T09:14:29Z","abstract_excerpt":"We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness $t$ ranging from $\\sim$5 to $\\sim$53\\,nm. Scanning electron microscopy and x-ray diffraction results indicate that the $t\\lesssim 16.8$\\,nm films are polycrystalline, while those $t\\gtrsim 26.7$\\,nm films are epitaxially grown along [100] direction. For the epitaxial films, the Altshuler and Aronov electron-electron interaction (EEI) effect governs the temperature behaviors of the sheet conductance $\\sigma_\\square$ at low temperatures, and the ratios of rel"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1503.00863","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}