{"paper":{"title":"Electronic structure and properties of pure and doped $\\epsilon$-FeSi from ab-initio local density theory","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Geneva, Switzerland), T. Jarlborg (DPMC, University of Geneva","submitted_at":"1998-11-18T11:22:36Z","abstract_excerpt":"Local density calculations of the electronic structure of FeSi, FeSi_{1-x}Al_x and Fe_{1-x}Ir_xSi systems in the B20 structure are presented. Pure FeSi has a semi-conducting gap of 6 mRy at 0 K.\n Effects of temperature (T) in terms of electronic and vibrational excitations are included. Various measurable properties, such as magnetic susceptibility chi(T), electronic specific heat C(T), thermoelectric power S(T), relative variations in resistivity rho(T), and peak positions in the density-of-states (DOS) are calculated. The feedback from vibrational disorder onto the electronic structure is fo"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/9811266","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}