{"paper":{"title":"Pure spin current transport in a SiGe alloy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"K. Hamaya, K. Sawano, M. Tsukahara, M. Yamada, S. Yamada, T. Naito","submitted_at":"2018-01-23T09:27:41Z","abstract_excerpt":"Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{\\rm 0.1}$Ge$_{\\rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n \\sim$ 5.0 $\\times$ 10$^{18}$ cm$^{-3}$). Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, manipulation, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si$_{\\rm 0.1}$Ge$_{\\rm 0.9}$ layer at low temperatures are reliably estimated to be $\\sim$ 0.5 $\\mu$m and $\\sim$ 0.2 ns, respectively. This study demonstrates the possi"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1801.07450","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}