{"paper":{"title":"AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Hsin-Hung Yao, Jianchang Yan, Jingtao Li, Jinmin Li, Junxi Wang, Xiaohang Li, Yi Lu","submitted_at":"2019-01-16T02:32:53Z","abstract_excerpt":"Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been demonstrated to form high electron mobility transistor (HEMT) through delta-doping in the barrier due to its none-polar property. Following the development in III-V HEMT which turns from delta-doping-induced to polarization-induced 2DEG, an alternative method based on III-N materials/beta-Ga2O3 heterostructure is proposed that utilizing the polarization difference on the interface. Further requirements of electric fie"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1901.05111","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}