{"paper":{"title":"Semiconducting graphene nanomeshes","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. M. Bratkovsky, I. I. Naumov","submitted_at":"2011-12-07T21:51:10Z","abstract_excerpt":"Symmetry arguments are used to describe all possible two-dimensional periodic corrugations of graphene (\"nanomeshes\") capable of inducing tangible semiconducting gap. Such nanomeshes or superlattices break the initial graphene translational symmetry in a way that produces mixing and subsequent splitting of the Dirac K and K' states. All of them have hexagonal Bravais lattice and are described by space groups that are subgroups of the graphene group. The first-principles calculations show that the gaps of about 0.5 eV can be induced at strains safely smaller than the graphene failure strain."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1112.1711","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}