{"paper":{"title":"UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Deyin Zhao, Dong Liu, In-Kyu Lee, Jeongpil Park, John D. Albrecht, Jung-Hun Seo, Kwangeun Kim, Munho Kim, Rafael Dalmau, Sang June Cho, Weidong Zhou Baxter Moody, Xin Yin, Xudong Wang, Yei Hwan Jung, Zhenqiang Ma","submitted_at":"2017-07-13T16:59:54Z","abstract_excerpt":"As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED performance and development. In this work, we report on 237 nm light emission with a record light output power of 265 uW from AlN/Al0.72Ga028N multiple quantum well UVC LEDs using bulk AlN substrates and p-type silicon nanomembrane contact layers for significantly improved AlGaN film quality and hole injection, respectively. No intensity degradation or efficiency "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1707.04223","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}