{"paper":{"title":"Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. Gubkin, A. Lugovikh, K. Moiseev, M. Lopez, S. Gallardo, T. Charikova, V. Nevedomsky, V. Okulov, Yu. Kudriavstev","submitted_at":"2014-09-09T05:21:08Z","abstract_excerpt":"The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\\delta$-layer thicknesses near GaInAs-quantum well ($\\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been esti"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1409.2598","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}