{"paper":{"title":"Electronic structure of the high and low pressure polymorphs of MgSiN$_{2}$","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Michelle A. Moram, Mikael R{\\aa}sander","submitted_at":"2016-05-02T14:24:40Z","abstract_excerpt":"We have performed density functional calculations on the group II-IV nitride MgSiN$_{2}$. At a pressure of about 20~GPa the ground state wurtzite derived MgSiN$_{2}$ structure (LP-MgSiN$_{2}$) transforms into a rock-salt derived structure (HP-MgSiN$_{2}$) in agreement with previous theoretical and experimental studies. Both phases are wide band gap semiconductors with indirect band gaps at equilibrium of 5.58 eV (LP-MgSiN$_{2}$) and 5.87 eV (HP-MgSiN$_{2}$), respectively. As the pressure increases, the band gaps become larger for both phases, however, the band gap in LP-MgSiN$_{2}$ increases f"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1605.00500","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}