{"paper":{"title":"A Symmetric Unified Transport and Charge Model for Metal-Oxide-Semiconductor Field-Effect Transistor from Diffusive to Ballistic Regimes","license":"http://creativecommons.org/licenses/by/4.0/","headline":"A symmetric unified transport model for MOSFETs bridges drift-diffusion and ballistic regimes with one high-field scattering length.","cross_cats":["physics.app-ph"],"primary_cat":"cond-mat.mes-hall","authors_text":"Chien-Ting Tung","submitted_at":"2026-04-26T05:34:59Z","abstract_excerpt":"This paper presents a symmetric unified transport (UT) compact model for metal-oxide-semiconductor field-effect transistors (MOSFETs) that bridges drift-diffusion (DD) and ballistic transport (BT) regimes. The proposed model self consistently accounts for both current and charge across the DD-BT transition. Quantum capacitance and carrier transport are incorporated into the charge density formulation. Drain side velocity saturation and the source side thermal velocity limit are unified within a single framework using a physically motivated high field scattering length, enabling accurate modeli"},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"The proposed model self consistently accounts for both current and charge across the DD-BT transition... enabling accurate modeling from DD square law behavior to the ballistic limit.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"That a single physically motivated high-field scattering length can unify source thermal velocity and drain velocity saturation while the charge model correctly captures capacitance reduction in the quasi-ballistic regime without additional empirical adjustments.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"A symmetric unified transport and charge model for MOSFETs that bridges diffusive to ballistic regimes using a high-field scattering length and accounts for quasi-ballistic capacitance reduction.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"A symmetric unified transport model for MOSFETs bridges drift-diffusion and ballistic regimes with one high-field scattering length.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"9ce5e46164ff503bc4b19f462fcb87ab112bee73a7969dbc6ce25d4d05977184"},"source":{"id":"2604.23541","kind":"arxiv","version":2},"verdict":{"id":"ba9474c2-b55a-4349-b95a-2391f38fd66d","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-08T05:32:10.720305Z","strongest_claim":"The proposed model self consistently accounts for both current and charge across the DD-BT transition... enabling accurate modeling from DD square law behavior to the ballistic limit.","one_line_summary":"A symmetric unified transport and charge model for MOSFETs that bridges diffusive to ballistic regimes using a high-field scattering length and accounts for quasi-ballistic capacitance reduction.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"That a single physically motivated high-field scattering length can unify source thermal velocity and drain velocity saturation while the charge model correctly captures capacitance reduction in the quasi-ballistic regime without additional empirical adjustments.","pith_extraction_headline":"A symmetric unified transport model for MOSFETs bridges drift-diffusion and ballistic regimes with one high-field scattering length."},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2604.23541/integrity.json","findings":[],"available":true,"detectors_run":[{"name":"doi_compliance","ran_at":"2026-05-19T23:03:04.186797Z","status":"completed","version":"1.0.0","findings_count":0}],"snapshot_sha256":"c140aa48489bae9a59189cad15439e3b86f9f829f889211e1cb21c53e20d35ef"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}