{"paper":{"title":"Origin of efficient thermoelectric performance in half-Heusler FeNb$_{0.8}$Ti$_{0.2}$Sb","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chen-Guang Fu, Hao Yu, Hong-Jie Pang, Liu-Cheng Chen, Tie-Jun Zhu, Xiao-Jia Chen","submitted_at":"2018-01-24T11:40:52Z","abstract_excerpt":"A half-Heusler material FeNb$_{0.8}$Ti$_{0.2}$Sb has been identified as a promising thermoelectric material due to its excellent thermoelectric performance at high temperatures. The origins of the efficient thermoelectric performance are investigated through a series of low-temperature (2 - 400 K) measurements. The high data coherence of the low and high temperatures is observed. An optimal and nearly temperature-independent carrier concentration is identified, which is ideal for the power factor. The obtained single type of hole carrier is also beneficial to the large Seebeck coefficient. The"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1801.07935","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}