{"paper":{"title":"Hole Mobility Model for Si Double-Gate Junctionless Transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Fan Chen, Jun Z. Huang, Kangliang Wei, Wei E. I. Sha","submitted_at":"2017-11-18T01:15:37Z","abstract_excerpt":"In this work, a physics based model is developed to calculate the hole mobility of ultra-thin-body double-gate junctionless transistors. Six-band $k\\cdot p$ Schr\\\"{o}dinger equation and Poisson equation are solved self-consistently. The obtained wave-functions and energies are stored in look-up tables. Hole mobility can be derived using the Kubo-Greenwood formula accounting for impurity, acoustic and optical phonon, and surface roughness scattering. Initial benchmark results are shown."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1801.06526","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}