{"paper":{"title":"Experimental Study of Pressure Influence on Tunnel Transport into 2DEG","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat","authors_text":"A.N. Voronovsky, E.M. Dizhur, I.N. Kotel'nikov, M. N. Feiginov, S.E. Dizhur","submitted_at":"2002-09-17T15:36:56Z","abstract_excerpt":"We present the concept and the results of pilot measurements of tunneling in a system {Al/$\\delta_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$\\delta$-GaAs} equals to 0.86 eV at P=0 and its pressure coefficient is $3 meV/kbar$; charged impurity density in the delta-layer starts to drop from $4.5\\times 10^{12} cm^{-2}$ down to $3.8\\times 10^{12} cm^{-2}$ at about 1.5 GPa; metal-insulator transition may occur in 2DEG at about 2 GPa."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0209407","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}