{"paper":{"title":"Ferroelectric polarization controlled orbital Hall conductivity in a higher-order topological insulator: \\textit{d1T}-phase monolayer MoS$_2$","license":"http://creativecommons.org/licenses/by/4.0/","headline":"The direction of ferroelectric polarization in d1T-phase monolayer MoS2 can switch the sign of its orbital Hall conductivity.","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Heng Gao, Wei Ren, YingJie Hu","submitted_at":"2026-05-18T00:51:40Z","abstract_excerpt":"The higher-order topological insulator is an extended concept of the conventional topological insulator, which obeys the generalization of the standard bulk-boundary correspondence. In our paper, we predict the monolayer \\textit{d1T}-phase transition metal dichalcogenide MoS$_2$ to be a higher-order topological insulator, while also possessing intriguing ferroelectric characteristics. We explicitly demonstrate the nontrivial topological index and reveal the hallmark corner states with quantized fractional charge within the bulk band gap. Second, we show the existence of a nonzero orbital Hall "},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"The direction of ferroelectric polarization can modulate the positive and negative values of the orbital Hall conductivity σ_OH^x in d1T MoS2.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"The d1T-phase monolayer is assumed to be both experimentally realizable and accurately described by the chosen computational method for topological invariants and orbital Hall conductivity, without significant corrections from electron correlations or substrate effects.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"d1T-phase monolayer MoS2 is predicted to be a ferroelectric higher-order topological insulator whose orbital Hall conductivity sign is switched by polarization direction.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"The direction of ferroelectric polarization in d1T-phase monolayer MoS2 can switch the sign of its orbital Hall conductivity.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"4054f3656b7c2f76c7342be9839eeb25e5e66fce7841d5ce6b62cb86554b8149"},"source":{"id":"2605.17722","kind":"arxiv","version":1},"verdict":{"id":"666d98ae-7d47-4da1-8e92-5b63888996ad","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-19T22:09:28.666846Z","strongest_claim":"The direction of ferroelectric polarization can modulate the positive and negative values of the orbital Hall conductivity σ_OH^x in d1T MoS2.","one_line_summary":"d1T-phase monolayer MoS2 is predicted to be a ferroelectric higher-order topological insulator whose orbital Hall conductivity sign is switched by polarization direction.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"The d1T-phase monolayer is assumed to be both experimentally realizable and accurately described by the chosen computational method for topological invariants and orbital Hall conductivity, without significant corrections from electron correlations or substrate effects.","pith_extraction_headline":"The direction of ferroelectric polarization in d1T-phase monolayer MoS2 can switch the sign of its orbital Hall conductivity."},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2605.17722/integrity.json","findings":[],"available":true,"detectors_run":[{"name":"doi_title_agreement","ran_at":"2026-05-19T22:31:19.374677Z","status":"completed","version":"1.0.0","findings_count":0},{"name":"doi_compliance","ran_at":"2026-05-19T22:20:53.887232Z","status":"completed","version":"1.0.0","findings_count":0},{"name":"shingle_duplication","ran_at":"2026-05-19T21:49:43.465898Z","status":"skipped","version":"0.1.0","findings_count":0},{"name":"citation_quote_validity","ran_at":"2026-05-19T21:49:43.295295Z","status":"skipped","version":"0.1.0","findings_count":0},{"name":"ai_meta_artifact","ran_at":"2026-05-19T21:33:23.499208Z","status":"skipped","version":"1.0.0","findings_count":0},{"name":"claim_evidence","ran_at":"2026-05-19T21:21:57.400936Z","status":"completed","version":"1.0.0","findings_count":0},{"name":"cited_work_retraction","ran_at":"2026-05-19T21:21:57.315691Z","status":"completed","version":"1.0.0","findings_count":0}],"snapshot_sha256":"155063f49d24e4265ebdaef8221a1681cd70500cc3c4d57f94c82041fda090f9"},"references":{"count":56,"sample":[{"doi":"","year":2013,"title":"Ando, Topological insulator materials, Journal of the Physical Society of Japan82, 102001 (2013)","work_id":"d10acdda-96d7-4766-a4cc-38ab7e0d5676","ref_index":1,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2011,"title":"X.-L. Qi and S.-C. Zhang, Topological insulators and superconductors, Reviews of modern physics83, 1057 (2011)","work_id":"20f6a0ca-cf43-4136-ae7e-7df5d70cdd2d","ref_index":2,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2012,"title":"S.-Q. Shen,Topological insulators, Vol. 174 (Springer, 2012)","work_id":"c6b44fe1-2906-4701-9901-3f323c1aa463","ref_index":3,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2010,"title":"M. Z. Hasan and C. L. Kane, Colloquium: topological insulators, Reviews of modern physics82, 3045 (2010)","work_id":"5c0a7bb0-7b2b-4aa9-b2c6-4606e099a35e","ref_index":4,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2010,"title":"H. Li, L. Sheng, D. Sheng, and D. 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