{"paper":{"title":"Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. K. Sood, Biswanath Chakraborty, K. S. Vasu, S. Sampath","submitted_at":"2010-05-13T05:41:46Z","abstract_excerpt":"We demonstrate top-gated field effect transistor made of reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. Raman spectrum of RGO flakes of typical size of 5{\\mu}m x 5{\\mu}m show a single 2D band at 2687 cm-1, characteristic of a single layer graphene. The two probe current - voltage measurements of RGO flakes, deposited in between the patterned electrodes with a gap of 2.5 {\\mu}m using a.c. dielectrophoresis show ohmic behavior with a resistance of ~ 37k{\\Omega}. The temperature dependence of the resistance (R) of RGO measured between temperatures 305 K to 393 K yields te"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1005.2258","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}