{"paper":{"title":"Application of single-electron effects to fingerprints of chips using image recognition algorithms","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"physics.app-ph","authors_text":"K. Ono, T. Tanamoto, Y. Nishi","submitted_at":"2019-04-16T03:09:47Z","abstract_excerpt":"Single-electron effects have been widely investigated as a typical physical phenomenon in nanoelectronics. The single-electron effect caused by trap sites has been observed in many devices. In general, traps are randomly distributed and not controllable; therefore, different current--voltage characteristics are observed through traps even in silicon transistors having the same device parameters (e.g., gate length). This allows us to use single-electron effects as fingerprints of chips. In this study, we analyze the single-electron effect of traps in conventional silicon transistors and show th"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1904.07423","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}