{"paper":{"title":"Measurements and atomistic theory of electron $g$ factor anisotropy for phosphorus donors in strained silicon","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci","physics.comp-ph"],"primary_cat":"cond-mat.mes-hall","authors_text":"A. R. Stegner, C. D. Hill, H. Huebl, L. C. L. Hollenberg, M. S. Brandt, M. Usman","submitted_at":"2017-12-19T03:34:40Z","abstract_excerpt":"This work reports the measurement of electron $g$ factor anisotropy ($| \\Delta g |$ = $| g_{001} - g_{1 \\bar 1 0} |$) for phosphorous donor qubits in strained silicon (sSi = Si/Si$_{1-x}$Ge$_x$) environments. Multi-million-atom tight-binding simulations are performed to understand the measured decrease in $| \\Delta g |$ as a function of $x$, which is attributed to a reduction in the interface-related anisotropy. For $x <$7\\%, the variation in $| \\Delta g |$ is linear and can be described by $\\eta_x x$, where $\\eta_x \\approx$1.62$\\times$ 10$^{-3}$. At $x$=20\\%, the measured $| \\Delta g |$ is 1."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1712.06765","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}