{"paper":{"title":"Enhanced high-temperature performance of GaN light-emitting diodes grown on silicon substrates","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Daemyung Chun, Dong-Pyo Han, Dong-Soo Shin, Hyun Kum, Jong-In Shim, Jongsun Maeng, Joosung Kim, Jun-Youn Kim, Namsung Kim, Young Hwan Park, Young Soo Park, Yuseung Kim","submitted_at":"2016-03-07T23:16:14Z","abstract_excerpt":"We compare the temperature dependence of optical and electrical characteristics of commercially available GaN light-emitting diodes (LEDs) grown on silicon and sapphire substrates. Contrary to conventional expectations, LEDs grown on silicon substrates, commonly referred to as GaN-on-Si LEDs, show less efficiency droop at higher temperatures even with more threading dislocations. Analysis of the junction temperature reveals that GaN-on-Si LEDs have a cooler junction despite sharing identical epitaxial structures and packaging compared to LEDs grown on sapphire substrates. We also observe a dec"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1603.02338","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}