{"paper":{"title":"Single layer MoS2 nanoribbon field effect transistor","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Chit Siong Lau, D. Kotekar-Patil, J. Deng, Kuan Eng Johnson Goh, S. L. Wong","submitted_at":"2018-11-04T15:46:10Z","abstract_excerpt":"We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 uA/um resulting in high on/off ratio of the order of 10^5. We observe mobility reaching as high as 50 cm^2/V.s with increasing source-drain bias."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1811.01390","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}