{"paper":{"title":"Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films","license":"http://creativecommons.org/licenses/by/3.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chengmin Shen, H.-J. Gao, Jing Tao, Kisslinger Kim, Li Huang, Lijun Wu, Matthias Schreck, Michael Weinl, Shixuan Du, Wenyan Xu, Yande Que, Yeliang Wang, Yimei Zhu, Yong Zhang, Yunqi Liu","submitted_at":"2015-03-02T02:16:38Z","abstract_excerpt":"Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with an yttria-stabilized zirconia buffer layer via intercalation approach. Such hetero-layered structures are compatible with current Si-based microelectronic technique, showing high promise for applications in future micro- and nano-electronic devices."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1503.00392","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}