{"paper":{"title":"Graphenic Carbon-Silicon Contacts for Reliability Improvement of Metal-Silicon Junctions","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.ins-det"],"primary_cat":"cond-mat.mes-hall","authors_text":"Franz Kreupl, Max Stelzer","submitted_at":"2016-12-09T10:50:20Z","abstract_excerpt":"Contact resistance and thermal degradation of metal-silicon contacts are challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts, but are known to diffuse into the active region under high current stress. In this paper we show that a graphenic carbon (C) contact deposited on n-type silicon (C-Si) by CVD, has the same low Schottky barrier height of 0.45 eV as TiSi, but a much improved reliability against high current stress. The C-Si contact is over 100 million times more stable against high current stress "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1612.06362","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}