{"paper":{"title":"Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.str-el","authors_text":"S.Ishiwata, Y.Shiomi, Y.Taguchi, Y.Tokura","submitted_at":"2011-06-28T11:38:57Z","abstract_excerpt":"Transport and magnetic properties have been systematically investigated for SmMnAsO_{1-x} with controlled electron-doping. As the electron band-filling is increased with the increase of oxygen deficiency (x), the resistivity monotonically decreases and the transition from Mott-insulator to metal occurs between x=0.17 and 0.2. Seebeck coefficient at room temperature abruptly changes around the critical doping level from a large value (\\sim -300 \\mu V/K) to a small one (\\sim -50 \\mu V/K) both with negative sign. In the metallic compounds with x=0.2 and x=0.3, Mn spins order antiferromagnetically"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1106.5630","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}