{"paper":{"title":"Combined electrical transport and capacitance spectroscopy of a ${\\mathrm{MoS_2-LiNbO_3}}$ field effect transistor","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.app-ph"],"primary_cat":"cond-mat.mes-hall","authors_text":"A. E. Nguyen, A. L. H\\\"orner, A. Wixforth, B. M\\\"oller, E. Preciado, F. J. R. Sch\\\"ulein, G. v. Son, H. J. Krenner, J. Mann, L. Bartels, W. Michailow","submitted_at":"2017-01-02T19:25:00Z","abstract_excerpt":"We have measured both the current-voltage ($I_\\mathrm{SD}$-$V_\\mathrm{GS}$) and capacitance-voltage ($C$-$V_\\mathrm{GS}$) characteristics of a $\\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured $I_\\mathrm{SD}$-$V_\\mathrm{GS}$ characteristics over the \\emph{entire range} of $V_\\mathrm{GS}$. Combining this experimental result with the measured current-vol"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1701.00506","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}