{"paper":{"title":"Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Gerg\\H{o} F\\\"ul\\\"op, Jesper Nyg\\r{a}rd, Morten Hannibal Madsen, Szabolcs Csonka, Zolt\\'an Scher\\\"ubl","submitted_at":"2016-01-08T12:29:35Z","abstract_excerpt":"Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic field, which is generated by a back gate and two side gates placed on the opposite sides of the NW. The strength of the SOI is analyzed by weak anti-localization effect. We demonstrate that the strength of SOI can be strongly tuned by a factor of 2 with the electric field across "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1601.01854","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}