{"paper":{"title":"Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.optics","authors_text":"Charles Santori, Chinmay Belthangady, James M. Higbie, John D. Perreault, Khoa Nguyen, Moonhee H. Kim, Paul Lebel, Vasiliki Demas, Victor M. Acosta, Vikram Bajaj","submitted_at":"2017-04-05T15:37:55Z","abstract_excerpt":"Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, non-bleaching emission line at 738\\,nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high three-dimensional spatial resolution. We have measured the two-photon fluorescence cross section of a negatively-charged silicon vacancy (SiV$^-$) in ion-implanted bulk diamond to be $0.74(19) \\times 10^{-50}{\\rm cm^4\\;s/photon}$ at an excitation wavelength of 1040\\,nm. In comparison to the diamond ni"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.01493","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}